Investigation of the Temperature Dependence of Volt-Ampere Characteristics of a Thin-Film Si3N4 Memristor

The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form spatial charge-limiting current (SCLC) equation assuming exponential and Gaussian trap distribution within band gap Si3N4. Our approximation demonstrated better experimental data matching compared to previous work, where was based on uniform law. Further, performed another additional sample measurement set samples evaluate parameters low-resistance state (LRS) variations temperatures. Analysis these measurements allowed us estimate which will retain LRS 10 years.